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BC846A-7-F

  • BC846A-7-F
  • BC846A-7-F

BC846A-7-F

BC846A-7-F

Diodes Incorporated

BC846A-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

BC846A-7-F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 300MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BC846
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 310mW
Transistor Application SWITCHING
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 65V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 65V
Transition Frequency 300MHz
Collector Emitter Saturation Voltage 200mV
Max Breakdown Voltage 65V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 6V
hFE Min 200
Max Junction Temperature (Tj) 150°C
Height 1.1mm
Length 3.05mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.03453 $0.10359
6,000 $0.03138 $0.18828
15,000 $0.02760 $0.414
30,000 $0.02508 $0.7524
75,000 $0.02256 $1.692
150,000 $0.01920 $2.88
BC846A-7-F Product Details

BC846A-7-F Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 110 @ 2mA 5V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Single BJT transistor can take a breakdown input voltage of 65V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

BC846A-7-F Features


the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz

BC846A-7-F Applications


There are a lot of Diodes Incorporated BC846A-7-F applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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