SBCP68T1G Overview

In this device, the DC current gain is 85 @ 500mA 1V, which is the ratio between the base current and the collector current.When VCE saturation is 500mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.An input voltage of 20V volts is the breakdown voltage.Collector current can be as low as 1A volts at its maximum.

SBCP68T1G Features

the DC current gain for this device is 85 @ 500mA 1V
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V

SBCP68T1G Applications

There are a lot of ON Semiconductor SBCP68T1G applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter