BFN26E6327HTSA1 Overview
This device has a DC current gain of 30 @ 30mA 10V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 200mA for this device.In this part, there is a transition frequency of 70MHz.As a result, it can handle voltages as low as 300V volts.When collector current reaches its maximum, it can reach 200mA volts.
BFN26E6327HTSA1 Features
the DC current gain for this device is 30 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 70MHz
BFN26E6327HTSA1 Applications
There are a lot of Infineon Technologies BFN26E6327HTSA1 applications of single BJT transistors.
- Driver
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- Interface
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- Inverter
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- Muting
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