SST4403T116 Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 1V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -1.3V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 750mV @ 50mA, 500mA.A constant collector voltage of 500mA is necessary for high efficiency.With the emitter base voltage set at 10V, an efficient operation can be achieved.Its current rating is -600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.There is a transition frequency of 200MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.In extreme cases, the collector current can be as low as 600mA volts.

SST4403T116 Features

the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of -1.3V
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 10V
the current rating of this device is -600mA
a transition frequency of 200MHz

SST4403T116 Applications

There are a lot of ROHM Semiconductor SST4403T116 applications of single BJT transistors.

• Inverter
• Muting
• Driver
• Interface