IXTN200N10L2

new-10%

Manufacturer part number:IXTN200N10L2

Manufacturer:IXYS

Description:MOSFET N-CH 100V 178A SOT-227

Case Package:SOT-23

Datasheet:IXTN200N10L2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2010
Series	Linear L2™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Resistance	11MOhm
Terminal Finish	NICKEL
Additional Feature	AVALANCHE RATED, UL RECOGNIZED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	830W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	830W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	11m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	4.5V @ 3mA
Input Capacitance (Ciss) (Max) @ Vds	23000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	178A Tc
Gate Charge (Qg) (Max) @ Vgs	540nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	178A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	500A
Avalanche Energy Rating (Eas)	5000 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free