BSC034N10LS5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
BSC034N10LS5ATMA1 Datasheet
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In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
26 Weeks
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Operating Temperature
-55°C~150°C TJ
Series
OptiMOS™ 5
Part Status
Active
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
2.5W Ta 156W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
3.4m Ω @ 50A, 10V
Vgs(th) (Max) @ Id
2.3V @ 115μA
Input Capacitance (Ciss) (Max) @ Vds
6500pF @ 50V
Current - Continuous Drain (Id) @ 25°C
19A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs
46nC @ 4.5V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.28000
$4.28
500
$4.2372
$2118.6
1000
$4.1944
$4194.4
1500
$4.1516
$6227.4
2000
$4.1088
$8217.6
2500
$4.066
$10165
BSC034N10LS5ATMA1 Product Details
BSC034N10LS5ATMA1 Description
A transistor is a miniature semiconductor that regulates or controls current or voltage flow in addition amplifying and generating these electrical signals and acting as a switch/gate for them. Typically, transistors consist of three layers, or terminals, of a semiconductor material, each of which can carry a current.
BSC034N10LS5ATMA1 Features
·Optimized for high performance SMPS, e.g.sync.Rec*100% avalanche tested