NTD5802NT4G Overview

The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 240 mJ (Eas).The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5025pF @ 25V.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 16.4A amps.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=40V, and this device has a drain-to-source breakdown voltage of 40V voltage.Turn-Off delay time?is?the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 39 ns.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 14 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.By using drive voltage (5V 10V), this device helps reduce its overall power consumption.

NTD5802NT4G Features

the avalanche energy rating (Eas) is 240 mJ
a continuous drain current (ID) of 16.4A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 39 ns

NTD5802NT4G Applications

There are a lot of ON Semiconductor NTD5802NT4G applications of single MOSFETs transistors.

• Micro Solar Inverter
• LCD/LED TV
• Power Management Functions
• Motor control
• Solar Inverter
• Lighting
• Motor drives and Uninterruptible Power Supplies
• DC/DC converters
• DC-to-DC converters
• Motor Drives and Uninterruptible Power Supples