FDB8876

new-10%

Manufacturer part number:FDB8876

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 30V 71A D2PAK

Case Package:SOT-23

Datasheet:FDB8876 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Supplier Device Package	TO-263AB
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	70W Tc
Element Configuration	Single
Power Dissipation	70W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	8.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1700pF @ 15V
Current - Continuous Drain (Id) @ 25°C	71A Tc
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Rise Time	113ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	41 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	71A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Input Capacitance	1.7nF
Drain to Source Resistance	8.5mOhm
Rds On Max	8.5 mΩ
RoHS Status	RoHS Compliant
Lead Free	Lead Free