HUFA75307T3ST

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Manufacturer part number:HUFA75307T3ST

Manufacturer:ON Semiconductor

Description:HUFA75307T3ST datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:HUFA75307T3ST Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	4
Weight	188mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2002
Series	Automotive, AEC-Q101, UltraFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Voltage - Rated DC	55V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	2.6A
Number of Elements	1
Power Dissipation-Max	1.1W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.1W
Case Connection	DRAIN
Turn On Delay Time	5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	90m Ω @ 2.6A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	250pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2.6A Ta
Gate Charge (Qg) (Max) @ Vgs	17nC @ 20V
Rise Time	30ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	2.6A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.09Ohm
Drain to Source Breakdown Voltage	55V
Height	1.8mm
Length	6.7mm
Width	3.7mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free