DMN25D0UFA-7B

new-10%

Manufacturer part number:DMN25D0UFA-7B

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 25V 0.24A 3DFN

Case Package:SOT-23

Datasheet:DMN25D0UFA-7B Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	3-XFDFN
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
JESD-609 Code	e4
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature	HIGH RELIABILITY
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	DMN25D0
Reference Standard	AEC-Q101
JESD-30 Code	R-PSSO-N2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	280mW Ta
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4 Ω @ 400mA, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	27.9pF @ 10V
Current - Continuous Drain (Id) @ 25°C	240mA Ta
Gate Charge (Qg) (Max) @ Vgs	0.36nC @ 4.5V
Drain to Source Voltage (Vdss)	25V
Drive Voltage (Max Rds On,Min Rds On)	2.7V 4.5V
Vgs (Max)	8V
Continuous Drain Current (ID)	240mA
Drain Current-Max (Abs) (ID)	0.24A
Drain-source On Resistance-Max	4Ohm
DS Breakdown Voltage-Min	25V
RoHS Status	ROHS3 Compliant