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BSC093N04LSGATMA1

BSC093N04LSGATMA1

BSC093N04LSGATMA1

Infineon Technologies

BSC093N04LSGATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

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BSC093N04LSGATMA1 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 39 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS™
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 8
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 35W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 35W
Case Connection DRAIN
Turn On Delay Time 3.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.3m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 2V @ 14μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 20V
Current - Continuous Drain (Id) @ 25°C 13A Ta 49A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time 2.4ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2.8 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 13A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Drain-source On Resistance-Max 0.0093Ohm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
5,000 $0.37487 $1.87435
10,000 $0.36256 $3.6256
25,000 $0.35584 $8.896
BSC093N04LSGATMA1 Product Details

Description


The BSC093N04LSGATMA1 is a 60V N-channel Power MOSFET designed for synchronous rectification in SMPS such as servers, desktops, and tablet chargers. High system efficiency and power density are made possible by the dramatically reduced gate and output charge. For high-frequency switching and DC-DC converters, the OptiMOSTM power MOSFET is suitable.



Features


? Excellent gate charge x R DS(on) product (FOM)

? Very low on-resistance R DS(on)

? Superior thermal resistance

? 100% Avalanche tested

? Pb-free plating; RoHS compliant

? Halogen-free according to IEC61249-2-21

? Fast switching MOSFET for SMPS

? Optimized technology for DC/DC converters

? Qualified according to JEDEC1) for target applications

? N-channel; Logic level

? Highest system efficiency

? Less paralleling required

? Increased power density

? Saving space

? Very low voltage overshoot



Applications


? Power Management

? Motor Drive & Control

? Industrial

? DC-DC converters

? Motor control


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