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BSD214SN L6327

BSD214SN L6327

BSD214SN L6327

Infineon Technologies

MOSFET N-CH 20V 1.5A SOT-363

SOT-23

BSD214SN L6327 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMAIBLE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) 40
Pin Count 6
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 500mW Ta
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 140m Ω @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 3.7μA
Input Capacitance (Ciss) (Max) @ Vds 143pF @ 10V
Current - Continuous Drain (Id) @ 25°C 1.5A Ta
Gate Charge (Qg) (Max) @ Vgs 0.8nC @ 5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Drain Current-Max (Abs) (ID) 1.5A
Drain-source On Resistance-Max 0.14Ohm
DS Breakdown Voltage-Min 20V
Feedback Cap-Max (Crss) 9 pF
RoHS Status RoHS Compliant

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