BSM15GD120DN2E3224BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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BSM15GD120DN2E3224BOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
17
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
17
JESD-30 Code
R-XUFM-X17
Number of Elements
6
Configuration
Full Bridge
Case Connection
ISOLATED
Power - Max
145W
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
500μA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
25A
Turn On Time
100 ns
Vce(on) (Max) @ Vge, Ic
3V @ 15V, 15A
Turn Off Time-Nom (toff)
470 ns
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
1nF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10
$61.10100
$611.01
BSM15GD120DN2E3224BOSA1 Product Details
BSM15GD120DN2E3224BOSA1 Description
BSM15GD120DN2E3224BOSA1 IGBT power module are power modules composed of insulated gate bipolar transistors (IGBTs). Since the IGBT module is a MOSFET structure, the gate of the IGBT is electrically isolated from the emitter by an oxide film, which has excellent device performance. It is widely used in servo motors, frequency converters, frequency conversion home appliances and other fields. It is a voltage-type control, which has the advantages of large input impedance, small driving power, simple control circuit, small switching loss, fast switching speed, high operating frequency, and large component capacity. In essence, it is a composite power device, which integrates the advantages of bipolar power transistors and power MOSFETs. And because of advanced processing technology, it has low on-state saturation voltage and high switching frequency (up to 20khz).