BSM75GD120DLCBOSA1 Description
BSM75GD120DLCBOSA1 is a 1200v IGBT. The transistor BSM75GD120DLCBOSA1 can be applied in Automotive, Hybrid, electric & powertrain systems, Communications equipment, Wireless infrastructure, Enterprise systems, and Datacenter & enterprise computing due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor BSM75GD120DLCBOSA1 is in the tray package with 500W power dissipation.
BSM75GD120DLCBOSA1 Features
Collector-emitter voltage: 1200V
DC-collector current Tc = 80°C: 75A
Surge forward current tp= 10 ms, Tvj= 25°C: 480A
Gate-emitter peak voltage VGEs: +/-20 V
Gate-emitter leakage current VcE=0 V,VGE= 20V, Tvj = 25°C IGEs: 400 nA
BSM75GD120DLCBOSA1 Applications
Automotive
Hybrid, electric & powertrain systems
Communications equipment
Wireless infrastructure
Enterprise systems
Datacenter & enterprise computing
