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DDB2U50N08W1RB23BOMA2

DDB2U50N08W1RB23BOMA2

DDB2U50N08W1RB23BOMA2

Infineon Technologies

DDB2U50N08W1RB23BOMA2 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

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DDB2U50N08W1RB23BOMA2 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 9
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
JESD-30 Code R-XUFM-X9
Number of Elements 1
Configuration 2 Independent
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Input Standard
Drain Current-Max (Abs) (ID) 60A
Drain-source On Resistance-Max 0.2Ohm
Pulsed Drain Current-Max (IDM) 100A
DS Breakdown Voltage-Min 600V
FET Technology METAL-OXIDE SEMICONDUCTOR
NTC Thermistor No
Input Capacitance (Cies) @ Vce 14nF @ 25V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $58.525887 $58.525887
10 $55.213101 $552.13101
100 $52.087831 $5208.7831
500 $49.139463 $24569.7315
1000 $46.357984 $46357.984
DDB2U50N08W1RB23BOMA2 Product Details

DDB2U50N08W1RB23BOMA2 Description

 

DDB2U50N08W1RB23BOMA2 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes DDB2U50N08W1RB23BOMA2 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

 

 

DDB2U50N08W1RB23BOMA2 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

DDB2U50N08W1RB23BOMA2 Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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