DDB2U50N08W1RB23BOMA2 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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DDB2U50N08W1RB23BOMA2 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
9
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-XUFM-X9
Number of Elements
1
Configuration
2 Independent
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Transistor Application
SWITCHING
Polarity/Channel Type
N-CHANNEL
Input
Standard
Drain Current-Max (Abs) (ID)
60A
Drain-source On Resistance-Max
0.2Ohm
Pulsed Drain Current-Max (IDM)
100A
DS Breakdown Voltage-Min
600V
FET Technology
METAL-OXIDE SEMICONDUCTOR
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
14nF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$58.525887
$58.525887
10
$55.213101
$552.13101
100
$52.087831
$5208.7831
500
$49.139463
$24569.7315
1000
$46.357984
$46357.984
DDB2U50N08W1RB23BOMA2 Product Details
DDB2U50N08W1RB23BOMA2 Description
DDB2U50N08W1RB23BOMA2 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes DDB2U50N08W1RB23BOMA2 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.