APTGT35X120T3G

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Manufacturer part number:APTGT35X120T3G

Manufacturer:Microsemi Corporation

Description:Trans IGBT Module N-CH 1.2KV 55A 32-Pin Case SP-3

Case Package:SOT-23

Datasheet:APTGT35X120T3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP3
Number of Pins	32
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Bulk
Published	2012
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	25
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	208W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	25
JESD-30 Code	R-XUFM-X25
Number of Elements	6
Configuration	Three Phase Inverter
Case Connection	ISOLATED
Power - Max	208W
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	55A
Current - Collector Cutoff (Max)	250μA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	2.5nF
Turn On Time	140 ns
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 35A
Turn Off Time-Nom (toff)	610 ns
IGBT Type	Trench Field Stop
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	2.5nF @ 25V
VCEsat-Max	2.1 V
Radiation Hardening	No
RoHS Status	RoHS Compliant