FD400R33KF2CNOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FD400R33KF2CNOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Published
2002
Pbfree Code
no
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
7
JESD-30 Code
R-XUFM-X5
Number of Elements
1
Configuration
Single Chopper
Case Connection
ISOLATED
Power - Max
4800W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
3300V
Current - Collector (Ic) (Max)
660A
Power Dissipation-Max (Abs)
4800W
Turn On Time
480 ns
Vce(on) (Max) @ Vge, Ic
4.25V @ 15V, 400A
Turn Off Time-Nom (toff)
1900 ns
NTC Thermistor
No
Gate-Emitter Voltage-Max
20V
Input Capacitance (Cies) @ Vce
50nF @ 25V
VCEsat-Max
4.25 V
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
FD400R33KF2CNOSA1 Product Details
FD400R33KF2CNOSA1 Description
FD400R33KF2CNOSA1 is a 3300v IGBT module. The FD400R33KF2CNOSA1 can be applied in Automotive, Hybrid, electric & powertrain systems, Communications equipment, Broadband fixed line access, Enterprise systems, and Enterprise machine applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FD400R33KF2CNOSA1 is in the tray package with 4kW Power dissipations.