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BSP170PE6327T

BSP170PE6327T

BSP170PE6327T

Infineon Technologies

MOSFET P-CH 60V 1.9A SOT223

SOT-23

BSP170PE6327T Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-4
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series SIPMOS®
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC -60V
Technology MOSFET (Metal Oxide)
Current Rating -1.9A
Power Dissipation-Max 1.8W Ta
FET Type P-Channel
Rds On (Max) @ Id, Vgs 300mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 410pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.9A Ta
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time 28ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 1.9A
Input Capacitance 410pF
Rds On Max 300 mΩ
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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