BSP52H6327XTSA1 Overview
This device has a DC current gain of 2000 @ 500mA 10V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 1.8V, which allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.8V @ 1mA, 1A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.In the part, the transition frequency is 200MHz.When collector current reaches its maximum, it can reach 1A volts.
BSP52H6327XTSA1 Features
the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
BSP52H6327XTSA1 Applications
There are a lot of Infineon Technologies BSP52H6327XTSA1 applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
