PHPT61002PYCLHX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PHPT61002PYCLHX Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Mounting Type
Surface Mount
Package / Case
SC-100, SOT-669
Operating Temperature
175°C TJ
Packaging
Tape & Reel (TR)
Published
2017
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Pin Count
4
Power - Max
25W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 2A 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
2A
Frequency - Transition
125MHz
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.371280
$0.37128
10
$0.350264
$3.50264
100
$0.330438
$33.0438
500
$0.311734
$155.867
1000
$0.294089
$294.089
PHPT61002PYCLHX Product Details
PHPT61002PYCLHX Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 2A 10V.When VCE saturation is 500mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Detection of Collector Emitter Breakdown at 100V maximal voltage is present.
PHPT61002PYCLHX Features
the DC current gain for this device is 20 @ 2A 10V the vce saturation(Max) is 500mV @ 200mA, 2A
PHPT61002PYCLHX Applications
There are a lot of Nexperia USA Inc. PHPT61002PYCLHX applications of single BJT transistors.