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IRF3711S

  • IRF3711S
  • IRF3711S

IRF3711S

IRF3711S

Infineon Technologies

IRF3711S datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF3711S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 3.1W Ta 120W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2980pF @ 10V
Current - Continuous Drain (Id) @ 25°C 110A Tc
Gate Charge (Qg) (Max) @ Vgs 44nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
RoHS Status Non-RoHS Compliant
IRF3711S Product Details

IRF3711S Description


IRF3711S is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 20V. The operating temperature of the IRF3711S is -55°C~150°C TJ and its maximum power dissipation is 120W Tc. IRF3711S has 3 pins and it is available in Tube packaging way.



IRF3711S Features


  • Ultra-Low Gate Impedance

  • Very Low RDS(on) at 4.5V VGS

  • Fully Characterized Avalanche Voltage and Current



IRF3711S Applications


  • High Frequency Isolated DC-DC   

  • Converters with Synchronous Rectification for Telecom and Industrial Use

  • High Frequency Buck Converters for Server Processor Power Synchronous FETOptimized for Synchronous Buck   

  • Converters Including Capacitive Induced Turn-on Immunity


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