IRF3711S datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRF3711S Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2004
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power Dissipation-Max
3.1W Ta 120W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
6m Ω @ 15A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2980pF @ 10V
Current - Continuous Drain (Id) @ 25°C
110A Tc
Gate Charge (Qg) (Max) @ Vgs
44nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
RoHS Status
Non-RoHS Compliant
In-Stock:1861 items
IRF3711S Product Details
IRF3711S Description
IRF3711S is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 20V. The operating temperature of the IRF3711S is -55°C~150°C TJ and its maximum power dissipation is 120W Tc. IRF3711S has 3 pins and it is available in Tube packaging way.
IRF3711S Features
Ultra-Low Gate Impedance
Very Low RDS(on) at 4.5V VGS
Fully Characterized Avalanche Voltage and Current
IRF3711S Applications
High Frequency Isolated DC-DC
Converters with Synchronous Rectification for Telecom and Industrial Use
High Frequency Buck Converters for Server Processor Power Synchronous FETOptimized for Synchronous Buck
Converters Including Capacitive Induced Turn-on Immunity
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