BSS214NWH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
BSS214NWH6327XTSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
Series
OptiMOS™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
500mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
500mW
Turn On Delay Time
4.1 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
140m Ω @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 3.7μA
Input Capacitance (Ciss) (Max) @ Vds
143pF @ 10V
Current - Continuous Drain (Id) @ 25°C
1.5A Ta
Gate Charge (Qg) (Max) @ Vgs
0.8nC @ 5V
Rise Time
7.8ns
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±12V
Fall Time (Typ)
1.4 ns
Turn-Off Delay Time
6.8 ns
Continuous Drain Current (ID)
1.5A
Threshold Voltage
950mV
Gate to Source Voltage (Vgs)
12V
Max Dual Supply Voltage
20V
Drain to Source Breakdown Voltage
20V
Max Junction Temperature (Tj)
150°C
Height
1mm
Length
2mm
Width
1.25mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.09560
$0.2868
6,000
$0.08680
$0.5208
15,000
$0.07800
$1.17
30,000
$0.07360
$2.208
75,000
$0.06612
$4.959
150,000
$0.06392
$9.588
BSS214NWH6327XTSA1 Product Details
BSS214NWH6327XTSA1 Description
These P-Channel MOSFETs from International Rectifier were produced using complex processing techniques, which resulted in an unusually low on-resistance per silicon area. Due to this benefit, designers now have access to a powerful tool for use in load and battery management applications. A special leadframe has been used to modify the SO-8, giving it better thermal characteristics and the ability to support multiple dies, making it ideal for a variety of power applications. These improvements greatly reduce the amount of board space needed in an application while enabling the use of several devices. The container is designed for use with vapor phase, infrared, or wave soldering.