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BSS214NWH6327XTSA1

BSS214NWH6327XTSA1

BSS214NWH6327XTSA1

Infineon Technologies

BSS214NWH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

BSS214NWH6327XTSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series OptiMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 500mW
Turn On Delay Time 4.1 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 140m Ω @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 3.7μA
Input Capacitance (Ciss) (Max) @ Vds 143pF @ 10V
Current - Continuous Drain (Id) @ 25°C 1.5A Ta
Gate Charge (Qg) (Max) @ Vgs 0.8nC @ 5V
Rise Time 7.8ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 1.4 ns
Turn-Off Delay Time 6.8 ns
Continuous Drain Current (ID) 1.5A
Threshold Voltage 950mV
Gate to Source Voltage (Vgs) 12V
Max Dual Supply Voltage 20V
Drain to Source Breakdown Voltage 20V
Max Junction Temperature (Tj) 150°C
Height 1mm
Length 2mm
Width 1.25mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.09560 $0.2868
6,000 $0.08680 $0.5208
15,000 $0.07800 $1.17
30,000 $0.07360 $2.208
75,000 $0.06612 $4.959
150,000 $0.06392 $9.588
BSS214NWH6327XTSA1 Product Details

BSS214NWH6327XTSA1 Description


These P-Channel MOSFETs from International Rectifier were produced using complex processing techniques, which resulted in an unusually low on-resistance per silicon area. Due to this benefit, designers now have access to a powerful tool for use in load and battery management applications. A special leadframe has been used to modify the SO-8, giving it better thermal characteristics and the ability to support multiple dies, making it ideal for a variety of power applications. These improvements greatly reduce the amount of board space needed in an application while enabling the use of several devices. The container is designed for use with vapor phase, infrared, or wave soldering.



BSS214NWH6327XTSA1 Features


? N channel


? Optimisation mode


? Level Super Logic (2.5V rated)


? Rated for avalanches


? Meet the requirements of AEC Q101


? 100 percent lead-free; complies with RoHS


? In accordance with IEC61249-2-21, halogen-free



BSS214NWH6327XTSA1 Applications


Switching applications


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