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RCX450N20

RCX450N20

RCX450N20

ROHM Semiconductor

MOSFET (Metal Oxide) N-Channel Bulk 55m Ω @ 22.5A, 10V ±30V 4200pF @ 25V 80nC @ 10V 200V TO-220-3 Full Pack

SOT-23

RCX450N20 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.23W Ta 40W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 55m Ω @ 22.5A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 45A Tc
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 45A
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.055Ohm
Pulsed Drain Current-Max (IDM) 180A
DS Breakdown Voltage-Min 200V
Avalanche Energy Rating (Eas) 160 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.098160 $1.09816
10 $1.036000 $10.36
100 $0.977358 $97.7358
500 $0.922036 $461.018
1000 $0.869846 $869.846
RCX450N20 Product Details

RCX450N20 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 160 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4200pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 45A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 180A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 200V in order to maintain normal operation.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

RCX450N20 Features


the avalanche energy rating (Eas) is 160 mJ
a continuous drain current (ID) of 45A
based on its rated peak drain current 180A.
a 200V drain to source voltage (Vdss)


RCX450N20 Applications


There are a lot of ROHM Semiconductor
RCX450N20 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools

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