FS200R07PE4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FS200R07PE4BOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Contact Plating
Tin
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
20
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
Published
2002
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
20
ECCN Code
EAR99
Max Power Dissipation
600W
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
20
Number of Elements
6
Configuration
Three Phase Inverter
Case Connection
ISOLATED
Power - Max
600W
Transistor Application
POWER CONTROL
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
650V
Current - Collector Cutoff (Max)
1mA
Current - Collector (Ic) (Max)
200A
Collector Emitter Saturation Voltage
1.95V
Turn On Time
200 ns
Vce(on) (Max) @ Vge, Ic
1.95V @ 15V, 200A
Turn Off Time-Nom (toff)
690 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
12nF @ 25V
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$157.55000
$157.55
FS200R07PE4BOSA1 Product Details
FS200R07PE4BOSA1 Description
FS200R07PE4BOSA1 developed by Infineon Technologies belongs to the family of EconoPACK?4 modules with trench/fieldstop IGBT 4 and emitter controlled 4 diode and PressFIT/NTC. It is a bipolar device with a MOS structure, which belongs to a power device with high-speed performance of power MOSFET and low-resistance performance of bipolar. It combines the advantages of a power transistor (Giant Transistor-GTR) and a power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications.