STGE200NB60S

new-10%

Manufacturer part number:STGE200NB60S

Manufacturer:STMicroelectronics

Description:STGE200NB60S datasheet pdf and Transistors - IGBTs - Modules product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGE200NB60S Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Chassis Mount, Panel, Screw
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Weight	28.349523g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Series	PowerMESH™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Nickel (Ni)
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	600W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Current Rating	150A
Base Part Number	STGE200
Pin Count	4
Number of Elements	1
Configuration	Single
Power Dissipation	600W
Case Connection	ISOLATED
Turn On Delay Time	64 ns
Transistor Application	POWER CONTROL
Rise Time	112ns
Drain to Source Voltage (Vdss)	600V
Polarity/Channel Type	N-CHANNEL
Input	Standard
Turn-Off Delay Time	2.4 μs
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	200A
Continuous Drain Current (ID)	200A
Current - Collector Cutoff (Max)	500μA
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.2V
Input Capacitance	1.56nF
Turn On Time	170 ns
Vce(on) (Max) @ Vge, Ic	1.6V @ 15V, 100A
Turn Off Time-Nom (toff)	4600 ns
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	1.56nF @ 25V
VCEsat-Max	1.6 V
Height	9.1mm
Length	38.2mm
Width	25.5mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free