FD900R12IP4DVBOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FD900R12IP4DVBOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
50 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
10
ECCN Code
EAR99
Additional Feature
UL RECOGNIZED
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PUFM-X10
Number of Elements
1
Configuration
Single
Case Connection
ISOLATED
Power - Max
5100W
Transistor Application
GENERAL PURPOSE
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
900A
Turn On Time
370 ns
Vce(on) (Max) @ Vge, Ic
2.05V @ 15V, 900A
Turn Off Time-Nom (toff)
1300 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
54nF @ 25V
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3
$505.68000
$1517.04
FD900R12IP4DVBOSA1 Product Details
FD900R12IP4DVBOSA1 Description
FD900R12IP4DVBOSA1 is a 1200v PrimePACK?2 module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode. The Infineon FD900R12IP4DVBOSA1 can be applied in commercial agriculture vehicles. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor FD900R12IP4DVBOSA1 is in the tray package with 5kW Power dissipation.
FD900R12IP4DVBOSA1 Features
Extended Operation Temperature Tvj op
High DC Stability
High Short Circuit Capability, Self Limiting Short