FMG2G50US60 datasheet pdf and Transistors - IGBTs - Modules product details from ON Semiconductor stock available on our website
SOT-23
FMG2G50US60 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Chassis Mount, Screw
Mounting Type
Chassis Mount
Package / Case
7PM-GA
Number of Pins
7
Operating Temperature
-40°C~150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
Screw
Voltage - Rated DC
600V
Max Power Dissipation
250W
Current Rating
50A
Configuration
Half Bridge
Element Configuration
Dual
Power Dissipation
250W
Rise Time
30ns
Input
Standard
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
50A
Current - Collector Cutoff (Max)
250μA
Hole Diameter
5.4 mm
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.2V
Input Capacitance
3.46nF
Vce(on) (Max) @ Vge, Ic
2.8V @ 15V, 50A
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
3.46nF @ 30V
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$31.75000
$31.75
500
$31.4325
$15716.25
1000
$31.115
$31115
1500
$30.7975
$46196.25
2000
$30.48
$60960
2500
$30.1625
$75406.25
FMG2G50US60 Product Details
FMG2G50US60 Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) powermodules provide low conduction and switching losses aswell as short circuit ruggedness. They are designed forapplications such as motor control, uninterrupted powersupplies (UPS) and general inverters where short circuitruggedness is a required feature.