FF900R12IP4BOSA2                    Description

An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. An IGBT power module is the assembly and physical packaging of several IGBT power semiconductor dies in one package.

FF900R12IP4BOSA2                    Applications

·Auxiliary Inverters

·High Power Converters

·Motor Drives Traction Drives

·UPS Systems

·Wind Turbines

FF900R12IP4BOSA2                    Features

·Extended Operation Temperature Tyop

·High DC Stability

·High Short Circuit Capability Self Limiting Short Circuit Current

·Unbeatable Robustness

·VcEsat with positive Temperature Coefficient

·Low VCEs at

Mechanical Features

·4kVAC 1min Insulation

·Package with CTI>400

·High Cree page and Clearance Distances

·High Power and Thermal Cycling Capability

·High Power Density