FF225R17ME3BOSA1                           Description

An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. An IGBT power module is the assembly and physical packaging of several IGBT power semiconductor dies in one package.

FF225R17ME3BOSA1                           Applications

? UPS systems

 ? High power converters

? Motor drives

 ? Wind turbines

FF225R17ME3BOSA1                           Features

? 500-mA low-dropout regulator with enable

? Available in fixed and adjustable (1.2-V to 5.5-V) versions

? High PSRR (50 dB at 10 kHz)

? Ultralow noise (33 μVRMS, TPS79530)

? Fast start-up time (50 μs)

? Stable with a 1-μF ceramic capacitor

? Excellent load and line transient response

? Low dropout voltage (110 mV at full load,

TPS79530)

? 6-pin SOT-223 and 3-mm × 3-mm VSON

packages