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APTGLQ200H120G

APTGLQ200H120G

APTGLQ200H120G

Microsemi Corporation

APTGLQ200x Series 1200 V 350 A High Speed Trench + Field Stop IGBT4 Power Module

SOT-23

APTGLQ200H120G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 36 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case SP6
Number of Pins 6
Operating Temperature -40°C~175°C TJ
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 1kW
Number of Elements 1
Configuration Full Bridge
Turn On Delay Time 30 ns
Power - Max 1000W
Input Standard
Turn-Off Delay Time 290 ns
Collector Emitter Voltage (VCEO) 2.4V
Max Collector Current 350A
Current - Collector Cutoff (Max) 100μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 12.3nF
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 200A
IGBT Type Trench Field Stop
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 12.3nF @ 25V
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $186.97930 $18697.93

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