FS75R07U1E4BPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FS75R07U1E4BPSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
32 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
1
Operating Temperature
-40°C~150°C
Published
2002
Pbfree Code
no
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
275W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Configuration
Full Bridge
Power - Max
275W
Halogen Free
Not Halogen Free
Input
Standard
Collector Emitter Voltage (VCEO)
650V
Current - Collector Cutoff (Max)
1mA
Current - Collector (Ic) (Max)
100A
Collector Emitter Saturation Voltage
1.55V
Vce(on) (Max) @ Vge, Ic
1.95V @ 15V, 75A
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
4.6nF @ 25V
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
30
$70.31200
$2109.36
FS75R07U1E4BPSA1 Product Details
FS75R07U1E4BPSA1 Description
IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.
FS75R07U1E4BPSA1 Applications
Air Conditioning
Motor Drives
Servo Drives
UPS Systems
FS75R07U1E4BPSA1 Features
Increased blocking voltage capability to 650V
High Short Circuit Capability, Self Limiting ShortCircuit Current