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FS75R07U1E4BPSA1

FS75R07U1E4BPSA1

FS75R07U1E4BPSA1

Infineon Technologies

FS75R07U1E4BPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FS75R07U1E4BPSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 32 Weeks
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 1
Operating Temperature -40°C~150°C
Published 2002
Pbfree Code no
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 275W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Configuration Full Bridge
Power - Max 275W
Halogen Free Not Halogen Free
Input Standard
Collector Emitter Voltage (VCEO) 650V
Current - Collector Cutoff (Max) 1mA
Current - Collector (Ic) (Max) 100A
Collector Emitter Saturation Voltage 1.55V
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 75A
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 4.6nF @ 25V
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
30 $70.31200 $2109.36
FS75R07U1E4BPSA1 Product Details

FS75R07U1E4BPSA1                            Description

 IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.

 

FS75R07U1E4BPSA1                            Applications

Air Conditioning

Motor Drives

Servo Drives

UPS Systems


FS75R07U1E4BPSA1                             Features

Increased blocking voltage capability to 650V

High Short Circuit Capability, Self Limiting ShortCircuit Current

Trench IGBT 4

Tvop = 150°C

 

Mechanical Features

Al2Os Substrate with Low Thermal Resistance

Compact design

PressFIT Contact Technology

Rugged Duplex frame construction

 

 


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