FZ2400R17KE3NOSA1 Description

FZ2400R17KE3NOSA1 is a 1700v IGBT-Modules. The FZ2400R17KE3NOSA1 can be applied in Industrial, Test & Measurement, Enterprise systems, Enterprise machines, Personal electronics, and Tablet applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FZ2400R17KE3NOSA1 is in the tray package with 12kW Power dissipation.

FZ2400R17KE3NOSA1 Features

Collector-emitter voltage Tvj = 25°C: 1700v

Continuous DC collector current TC = 25°C, Tvj max = 150°C: 3200A

Repetitive peak collector current Tp = 1 ms: 4800A

Total power dissipation Tc = 25°C: 12kW

Gate-emitter peak voltage: ±20V

FZ2400R17KE3NOSA1 Applications

Automotive 

Advanced driver assistance systems (ADAS) 

Enterprise systems 

Enterprise machine 

Personal electronics 

Home theater & entertainment