MWI50-12A7

new-10%

Manufacturer part number:MWI50-12A7

Manufacturer:IXYS

Description:MOD IGBT SIXPACK RBSOA 1200V E2

Case Package:SOT-23

Datasheet:MWI50-12A7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	E2
Number of Pins	2
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	11
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	UL RECOGNIZED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	350W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Base Part Number	MWI
Pin Count	17
JESD-30 Code	R-XUFM-X11
Number of Elements	6
Configuration	Three Phase Inverter
Case Connection	ISOLATED
Power - Max	350W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	2.7V
Max Collector Current	85A
Current - Collector Cutoff (Max)	4mA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	3.3nF
Turn On Time	170 ns
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 50A
Turn Off Time-Nom (toff)	570 ns
IGBT Type	NPT
NTC Thermistor	No
Input Capacitance (Cies) @ Vce	3.3nF @ 25V
RoHS Status	ROHS3 Compliant