RJH60F0DPK-00#T0

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Manufacturer part number:RJH60F0DPK-00#T0

Manufacturer:Renesas Electronics America

Description:IGBT 600V 50A 201.6W TO-3P

Case Package:SOT-23

Datasheet:RJH60F0DPK-00#T0 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Published	2011
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	201.6W
Terminal Position	SINGLE
Base Part Number	RJH60F
Pin Count	2
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	201.6W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.82V
Max Collector Current	50A
Reverse Recovery Time	140 ns
Collector Emitter Breakdown Voltage	600V
Test Condition	400V, 30A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.82V @ 15V, 25A
IGBT Type	Trench
Td (on/off) @ 25°C	46ns/70ns
Gate-Emitter Voltage-Max	30V
Gate-Emitter Thr Voltage-Max	8V
RoHS Status	ROHS3 Compliant