GT30J121(Q)

new-10%

Manufacturer part number:GT30J121(Q)

Manufacturer:Toshiba Semiconductor and Storage

Description:Trans IGBT Chip N-CH 600V 30A 3-Pin(3+Tab) TO-3PN

Case Package:SOT-23

Datasheet:GT30J121(Q) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Packaging	Tube
Published	2006
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	170W
Element Configuration	Single
Input Type	Standard
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	30A
Collector Emitter Breakdown Voltage	600V
Test Condition	300V, 30A, 24 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.45V @ 15V, 30A
Current - Collector Pulsed (Icm)	60A
Td (on/off) @ 25°C	90ns/300ns
Switching Energy	1mJ (on), 800μJ (off)
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free