IGC27T120T8QX1SA1 Description

The IGC27T120T8QX1SA1 is a TRENCHSTOP? IGBT4 High Speed Chip. The Insulated Gate Bipolar Transistor, or IGBT, is a BJT and MOSFET hybrid. The union between them is also implied by the name. The input portion of a MOSFET with an extremely high input impedance is referred to as an "insulated gate." Instead of drawing input current, it relies on the voltage at its gate terminal to function. Bipolar refers to the output region of a BJT, where both classes of charge carriers are responsible for the current flow. Using low voltage signals, it is able to manage very high currents and voltages. IGBTs are voltage-controlled devices thanks to this hybrid configuration.

IGC27T120T8QX1SA1 Features

• Positive temperature coefficient

• Easy paralleling

• 1200V trench & field stop technology

• Low switching losses

IGC27T120T8QX1SA1 Applications

• Welding

• Solar inverters

• High frequency drives

• Uninterruptible power supplies