IGP20N65F5XKSA1                Description

A trench-gate field-stop insulated gate bipolar transistor (IGBT) is a device that might be used in such applications as motor controllers, welding machines, induction heating, and power inverters.

IGP20N65F5XKSA1                Features

High speed F5 technology offering

?Best-in-Class efficiency in hard switching and resonant

To pologies

?650V breakdown voltage

?Low Qg

?Ideal fit with SIC Schottky Diode in boost converters

?Maximum junction temperature 175°C

?Qualified according to JEDEC for target applications

?Pb-free lead plating;RoH S compliant

?Complete product spectrum and P Spice Models:

IGP20N65F5XKSA1                Applications

?Solar converters

?Uninterruptible power supplies

?Welding converters

?Mid to high range switching frequency converters