STGB19NC60WT4

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Manufacturer part number:STGB19NC60WT4

Manufacturer:STMicroelectronics

Description:STGB19NC60WT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGB19NC60WT4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-65°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerMESH™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	130W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
Base Part Number	STGB19
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Input Type	Standard
Power - Max	130W
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	40A
Collector Emitter Breakdown Voltage	600V
Max Breakdown Voltage	600V
Turn On Time	33 ns
Test Condition	390V, 12A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 12A
Turn Off Time-Nom (toff)	204 ns
Gate Charge	53nC
Td (on/off) @ 25°C	25ns/90ns
Switching Energy	81μJ (on), 125μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.75V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant