STGB30V60DF

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Manufacturer part number:STGB30V60DF

Manufacturer:STMicroelectronics

Description:STGB30V60DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGB30V60DF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight	2.240009g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Cut Tape (CT)
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	258W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STGB30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	258W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	60A
Reverse Recovery Time	53 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.85V
Max Breakdown Voltage	600V
Turn On Time	59 ns
Test Condition	400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 30A
Turn Off Time-Nom (toff)	225 ns
IGBT Type	Trench Field Stop
Gate Charge	163nC
Current - Collector Pulsed (Icm)	120A
Td (on/off) @ 25°C	45ns/189ns
Switching Energy	383μJ (on), 233μJ (off)
Gate-Emitter Voltage-Max	20V
RoHS Status	ROHS3 Compliant