IXXK300N60B3

new-10%

Manufacturer part number:IXXK300N60B3

Manufacturer:IXYS

Description:IGBT Transistors XPT 600V IGBT 300A

Case Package:SOT-23

Datasheet:IXXK300N60B3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2012
Series	GenX3™, XPT™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	AVALANCHE RATED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	2.3kW
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	2300W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.6V
Max Collector Current	550A
Collector Emitter Breakdown Voltage	600V
Turn On Time	137 ns
Test Condition	400V, 100A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.6V @ 15V, 100A
Turn Off Time-Nom (toff)	430 ns
IGBT Type	PT
Gate Charge	460nC
Current - Collector Pulsed (Icm)	1140A
Td (on/off) @ 25°C	50ns/190ns
Switching Energy	3.45mJ (on), 2.86mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
RoHS Status	ROHS3 Compliant