IGW08T120FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IGW08T120FKSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Through Hole
Package / Case
TO-247-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
Packaging
Tube
Published
2008
Series
TrenchStop®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
70W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
JEDEC-95 Code
TO-247AD
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
16A
Turn On Time
66 ns
Test Condition
600V, 8A, 81 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 8A
Turn Off Time-Nom (toff)
710 ns
IGBT Type
NPT, Trench Field Stop
Gate Charge
53nC
Current - Collector Pulsed (Icm)
24A
Td (on/off) @ 25°C
40ns/450ns
Switching Energy
1.37mJ
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
240
$2.43121
$583.4904
IGW08T120FKSA1 Product Details
IGW08T120FKSA1 Description
IGW08T120FKSA1 is a type of low-loss IGBT designed based on TrenchStop? and Fieldstop technology for 1200 V applications. It is able to deliver very tight parameter distribution, high ruggedness, temperature stable behavior, and low gate charge, making it well suited for frequency converters and uninterrupted power supply. Moreover, easy parallel switching capability can be provided on the basis of NPT technology due to the positive temperature coefficient in VCE(sat).