STGD7NB60KT4

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Manufacturer part number:STGD7NB60KT4

Manufacturer:STMicroelectronics

Description:STGD7NB60KT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGD7NB60KT4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	70W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	7A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STGD7
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Power Dissipation	70W
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	14A
JEDEC-95 Code	TO-252AA
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.8V
Max Breakdown Voltage	600V
Turn On Time	21 ns
Test Condition	480V, 7A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 7A
Turn Off Time-Nom (toff)	202 ns
Gate Charge	32.7nC
Current - Collector Pulsed (Icm)	56A
Td (on/off) @ 25°C	15ns/50ns
Switching Energy	95μJ (on), 140μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	7V
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant