IGW25N120H3FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IGW25N120H3FKSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Through Hole
Package / Case
TO-247-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2008
Series
TrenchStop®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Input Type
Standard
Power - Max
326W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
50A
Turn On Time
61 ns
Test Condition
600V, 25A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 25A
Turn Off Time-Nom (toff)
397 ns
IGBT Type
Trench Field Stop
Gate Charge
115nC
Current - Collector Pulsed (Icm)
100A
Td (on/off) @ 25°C
27ns/277ns
Switching Energy
2.65mJ
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$8.062180
$8.06218
10
$7.605830
$76.0583
100
$7.175311
$717.5311
500
$6.769162
$3384.581
1000
$6.386002
$6386.002
IGW25N120H3FKSA1 Product Details
IGW25N120H3FKSA1 Description
IGW25N120H3FKSA1 is a high-speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120. The Infineon IGW25N120H3FKSA1 can be applied in solar inverters, uninterruptible power supplies, welding converters, and converters with high switching frequency. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IGW25N120H3FKSA1 is in the PG-TO247-3 package with 326W power dissipation.
IGW25N120H3FKSA1 Features
TRENCHSTOPTM technology offering
best in class switching performance: less than 500μJ total switching losses achievable
very low VCEsat
low EMI
maximum junction temperature 175°C
qualified according to JEDEC for target applications