IGW50N65H5FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IGW50N65H5FKSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
26 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2008
Series
TrenchStop®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
305W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Element Configuration
Single
Power Dissipation
305W
Input Type
Standard
Collector Emitter Voltage (VCEO)
1.65V
Max Collector Current
80A
Collector Emitter Breakdown Voltage
650V
Collector Emitter Saturation Voltage
1.65V
Test Condition
400V, 25A, 12 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 50A
Gate Charge
120nC
Current - Collector Pulsed (Icm)
150A
Td (on/off) @ 25°C
21ns/180ns
Switching Energy
520μJ (on), 180μJ (off)
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$17.338693
$17.338693
10
$16.357258
$163.57258
100
$15.431375
$1543.1375
500
$14.557901
$7278.9505
1000
$13.733869
$13733.869
IGW50N65H5FKSA1 Product Details
IGW50N65H5FKSA1 Description
IGW50N65H5FKSA1 is a type of TRENCHSTOP? 5 high-speed switching IGBT designed based on high-speed H5 technology to provide best-in-class efficiency in hard switching and resonant topologies, 650V breakdown voltage, and low gate charge QG. Based on its specific characteristics, the IGW50N65H5FKSA1 IGBT is well suited for a wide range of applications, including solar converters, uninterruptible power supplies, and more.
IGW50N65H5FKSA1 Features
Maximum junction temperature175°C
650V breakdown voltage
Low QG
Best-in-Class efficiency in hard switching and resonant topologies