IGW30N65L5XKSA1 Description

IGW30N65L5XKSA1 is a 650v Low VCE(sat) IGBT in TRENCHSTOPTM5 technology. The Infineon IGW30N65L5XKSA1 can be applied in Uninterruptible power supplies, Solar photovoltaic inverters, and Welding machine applications due to the following features. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor IGW30N65L5XKSA1 is in the PG-TO247-3 package with 227W power dissipation. 

IGW30N65L5XKSA1 Features

Very low collector-emitter saturation voltage VCEsat

The best-in-Class tradeoff between conduction and switching losses

650V breakdown voltage

Low gate charge QG

Maximum junction temperature 175°C

Qualified according to JEDEC for target applications

Pb-free lead plating

RoHS compliant

IGW30N65L5XKSA1 Applications

Uninterruptible power supplies

Solar photovoltaic inverters

Welding machines

Automotive 

Infotainment & cluster 

Communications equipment