IGW60T120FKSA1

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Manufacturer part number:IGW60T120FKSA1

Manufacturer:Infineon Technologies

Description:IGW60T120FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IGW60T120FKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mounting Type	Through Hole
Package / Case	TO-247-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tube
Published	2008
Series	TrenchStop®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	375W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
JEDEC-95 Code	TO-247AD
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	100A
Turn On Time	95 ns
Test Condition	600V, 60A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 60A
Turn Off Time-Nom (toff)	730 ns
IGBT Type	Trench Field Stop
Gate Charge	280nC
Current - Collector Pulsed (Icm)	150A
Td (on/off) @ 25°C	50ns/480ns
Switching Energy	9.5mJ
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$6.928800	$6.9288
10	$6.536604	$65.36604
100	$6.166607	$616.6607
500	$5.817554	$2908.777
1000	$5.488259	$5488.259

IGW60T120FKSA1 Description

In TrenchStop? and field-stop technologies, the IGW60T120 is a Low Loss IGBT. Due to the combination of TrenchStop?-cell and field-stop idea, TrenchStop? IGBT technology significantly improves the device's static and dynamic performance. The use of an IGBT in conjunction with a soft recovery emitter-controlled diode reduces turn-on losses even more. Due to the optimum compromise between switching and conduction losses, the highest efficiency is achieved.

IGW60T120FKSA1 Features

Low gate charge
Low EMI emissions
Low switching losses
High device reliability
Very tight parameter distribution
10μs Short-circuit withstand time
High ruggedness, temperature stable behavior
Lowest Vce (sat) drop for lower conduction losses
Highest efficiency - Low conduction and switching losses
Very soft, fast recovery anti-parallel emitter controlled diode
Easy parallel switching capability due to positive temperature coefficient in Vce (sat)