FGA40N65SMD

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Manufacturer part number:FGA40N65SMD

Manufacturer:ON Semiconductor

Description:FGA40N65SMD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGA40N65SMD Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Weight	6.401g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	LOW CONDUCTION LOSS
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	349W
Number of Elements	1
Rise Time-Max	28ns
Element Configuration	Single
Power Dissipation	349W
Input Type	Standard
Turn On Delay Time	12 ns
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	92 ns
Collector Emitter Voltage (VCEO)	650V
Max Collector Current	80A
Reverse Recovery Time	42 ns
Collector Emitter Breakdown Voltage	650V
Collector Emitter Saturation Voltage	2.5V
Test Condition	400V, 40A, 6 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 40A
IGBT Type	Field Stop
Gate Charge	119nC
Current - Collector Pulsed (Icm)	120A
Td (on/off) @ 25°C	12ns/92ns
Switching Energy	820μJ (on), 260μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	17ns
Height	20.1mm
Length	16.2mm
Width	5mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free