IHP10T120

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Manufacturer part number:IHP10T120

Manufacturer:Infineon Technologies

Description:IHP10T120 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IHP10T120 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tube
Published	2009
Series	TrenchStop®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	138W
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	138W
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	16A
Reverse Recovery Time	185 ns
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	69 ns
Test Condition	610V, 10A, 81 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 10A
Turn Off Time-Nom (toff)	769 ns
IGBT Type	Trench Field Stop
Gate Charge	53nC
Current - Collector Pulsed (Icm)	24A
Td (on/off) @ 25°C	45ns/520ns
Switching Energy	1.46mJ
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free