IHW20N120R5XKSA1

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Manufacturer part number:IHW20N120R5XKSA1

Manufacturer:Infineon Technologies

Description:IHW20N120R5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IHW20N120R5XKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Packaging	Tube
Published	2013
Series	TrenchStop®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Max Power Dissipation	288W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	288W
Halogen Free	Halogen Free
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	40A
JEDEC-95 Code	TO-247AC
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	92 ns
Test Condition	600V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.75V @ 15V, 20A
Turn Off Time-Nom (toff)	685 ns
Gate Charge	170nC
Current - Collector Pulsed (Icm)	60A
Td (on/off) @ 25°C	-/260ns
Switching Energy	750μJ (off)
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

Quantity	Unit Price	Ext. Price
1	$1.928013	$1.928013
10	$1.818880	$18.1888
100	$1.715925	$171.5925
500	$1.618797	$809.3985
1000	$1.527167	$1527.167

IHW20N120R5XKSA1 Description

The IHW20N120R5XKSA1 is a Reverse Conducting IGBT with a monolithic body diode. A three-terminal power semiconductor known as an insulated-gate bipolar transistor (IGBT) is primarily employed as an electronic switch and has evolved over time to combine high efficiency and quick switching. It has four P-N-P-N layers that alternate, and its four layers are interconnected by a metal-oxide-semiconductor (MOS) gate structure.

IHW20N120R5XKSA1 Features

Low EMI
Pb-free lead plating; RoHS compliant
Halogen free (according to IEC61249-2-21)
Powerful monolithic body diode with low forward voltage designed for soft commutation
TRENCHSTOP? technology offering:

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- low VCEsat

- easy parallel switching capability due to positive temperature coefficient in VCEsat