NGTB40N65IHRTG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
NGTB40N65IHRTG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
25 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 6 days ago)
Packaging
Tube
Published
2017
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
Not Applicable
Terminal Finish
Tin (Sn)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.818378
$1.818378
10
$1.715451
$17.15451
100
$1.618350
$161.835
500
$1.526746
$763.373
1000
$1.440326
$1440.326
NGTB40N65IHRTG Product Details
NGTB40N65IHRTG Description
This Insulated Gate Bipolar Transistor (IGBT) features robust and cost-effective Field Stop (FS2) trench construction with a monolithic RC Diode. It provides a cost-effective solution for applications where diode losses are minimal. The IGBT is optimized for low conduction losses (low VCEsat) and is well suited for resonant or soft switching applications.
NGTB40N65IHRTG Features
Extremely Efficient Trench with Field Stop Technology
Low Conduction Design for Soft Switching Application
Reduced Power Dissipation in Inducting Heating Application