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NGTB40N65IHRTG

NGTB40N65IHRTG

NGTB40N65IHRTG

ON Semiconductor

NGTB40N65IHRTG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

NGTB40N65IHRTG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 25 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 6 days ago)
Packaging Tube
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Terminal Finish Tin (Sn)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.818378 $1.818378
10 $1.715451 $17.15451
100 $1.618350 $161.835
500 $1.526746 $763.373
1000 $1.440326 $1440.326
NGTB40N65IHRTG Product Details

NGTB40N65IHRTG  Description

This Insulated Gate Bipolar Transistor (IGBT) features robust and cost-effective Field Stop (FS2) trench construction with a monolithic RC Diode. It provides a cost-effective solution for applications where diode losses are minimal. The IGBT is optimized for low conduction losses (low VCEsat) and is well suited for resonant or soft switching applications.



NGTB40N65IHRTG  Features

Extremely Efficient Trench with Field Stop Technology

Low Conduction Design for Soft Switching Application

Reduced Power Dissipation in Inducting Heating Application

Reliable and Cost-Effective Single Die Solution

This is a Pb?Free Device



NGTB40N65IHRTG  Applications

Inductive Heating

Air Conditioning PFC

Welding




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